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SUB 1GHz NBIoT/ZigBee/LP-WAN/ Wi-SUN  射频前端模组

KCT8102L

SUB 1GHz NBIoT/ZigBee/LP-WAN/ Wi-SUN 射频前端模组

产品介绍

KCT8102L is a highly-integrated, RF Front-End Integrated Circuit which

incorporates key RF functionality needed for a TDD-mode operating in the

860M~930MHz ISM frequency bands. KCT8102L is integrated with a highefficiency

power amplifier (PA), a low noise amplifier (LNA) with bypass, and

a single-pole, double-throw (SPDT) switch all in one device.

KCT8102L has simple and low-voltage 1.6 to 3.6V control logic, and wide

supply voltage range from 3.0 to 5.25V allowing the KCT8102L to be used in

battery powered applications.

KCT8102L is assembled in a compact, low-profile 3x3x0.76mm 16-lead LGA

package. KCT8102L is the ideal RF front-end solution for implementing sub-

GHz from 860M~930MHz supporting multiple standards including LP-WAN

(LoRa, Sigfox, etc.), Wi-SUN, and other loT applications.


产品规格

Nominated voltage at 3.3V&4.2V&5V

+30.5dBm saturated output power at 5.0V

+29.0dBm saturated output power at 4.2V

+27.5dBm saturated output power at 3.3V

Integrated LNA with noise figure of 1.6dB at 5V&4.2V and 1.7dB at 3.3V

Receive bypass path with low loss: 2.0dB at 5V&4.2V&3.3V

Support external Receive filter

ESD Protection Circuitry on All Ports

Small package: LGA-16L, 3×3×0.76mm (MSL3, 260°C per JEDEC J-STD-020)

RoHS and REACH Compliant


SUB 1GHz NBIoT/ZigBee/LP-WAN/ Wi-SUN  射频前端模组

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